GOI 1MHz 0.5ns exposure gated intensifier |
|
|
This gated intensifier is optimised for high repetition rates to 1MHz system. The voltage applied to the photocathode is higher than in the HRI giving improved spatial resolution. (In the 100MHz system RF heating effects limit the maximum cathode pulse voltage to 50V, for sub ns gate speeds the pulse voltage is significantly lower.) The 1MHz system provided a more rapid turn off and is well suited for use with high repetition rate amplified laser systems and laser diodes. We have used this system with a 1ns pulser laser diode and have obtained LIDAR images at ranges of 30 metres with a depth resolution of a few cm.